| EPSRC Reference: |
GR/R24531/01 |
| Title: |
Defect Reactions in SiGe |
| Principal Investigator: |
Davies, Professor G |
| Other Investigators: |
|
| Researcher Co-Investigators: |
|
| Project Partners: |
|
| Department: |
Physics |
| Organisation: |
Kings College London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
08 May 2001 |
Ends: |
07 November 2004 |
Value (£): |
259,086
|
| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
|
| EPSRC Industrial Sector Classifications: |
|
| Related Grants: |
|
| Panel History: |
|
|
Summary on Grant Application Form |
|
There is intense interest in making silicon-based ICs which can operate faster, at lower power consumption, by incorporating silicon-germanium alloys. The proposed programme will investigate the properties of intrinsic defects, impurities and other atomic-sized defects in SiGe, contributing to filling a recently identified gap in the UK portfolio of basic science. The study will be in collaboration with other universityies and industries currently involved in SiGe material growth and device design. Unstained, strained and relaxed Si Ge will be investigated by high resolution photoluminescence, high resolution Laplace deep level transient spectroscopy and electron paramagnetic resonance, in conjunction with theoretical modelling. Systematic studies will build upon the considerable knowledge of defects in pure Si, tracing their evolution with increasing Ge concentration in the alloy, and especially considering the effect of changes in the host-lattice environment. Defects created by electron irradiation and ion implantation will be studied, and the evolution from small aggregates to clusters, implicated in transient enhanced diffusion, will be characterised as a function of Ge content and strain. Vacancy, interstitial and impurity reactions with interfaces will also be studied, in relation to trapping and excess change. The work will be supported by modelling which will provide theretical investigations of the preferred environments of the neighbourhoods of defects, and of the preferred composition of the self-interstitial structures. The project will be carried out in close conjunction with the SiGe community in the UK. The outcome will be an improved understanding of defects arising from different growth techniques, providing basic knowledge to support commercial applications of this material.
|
|
Key Findings |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Potential use in non-academic contexts |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Impacts |
|
| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
|
| Date Materialised |
|
|
|
|
Sectors submitted by the Researcher |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
| Project URL: |
|
| Further Information: |
|
| Organisation Website: |
|