Details of Grant 

EPSRC Reference:	GR/J93894/01
Title:	MOVPE GROWTH, CHARACTERIZATION, PHYSICS AND DEVICES OF GAN AND RELATED MATERIALS
Principal Investigator:	Whitehouse, Professor CR
Other Investigators:	Roberts, Dr JS Houston, Professor P Mowbray, Professor D Skolnick, Professor M Robson, Professor P
Researcher Co-Investigators:
Project Partners:
Department:	Electronic and Electrical Engineering
Organisation:	University of Sheffield
Scheme:	Standard Research (Pre-FEC)
Starts:	03 October 1994	Ends:	02 October 1997	Value (£):	249,737
EPSRC Research Topic Classifications:	Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
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Panel History:
Summary on Grant Application Form
Support for an MOVPE growth, characterisation, physics and device programme on wide band gap III-V nitride materials is requested. The work will be aimed towards the application of such materials as UV-blue light emitters and for high temperature electronics applications. The growth will be performed using both the proven high temperature (1100C) NH3-(CH4)3Ga,Al reactions and also employing novel low temperature (600-800C) precursors developed by EPICHEM Ltd. Growth will be carried out principally on sapphire substrates, but also on lattice matched GaN substrates, again adding a strong element of novelty to the proposed programme. The proposal programme will include MOVPE growth, optical spectroscopy and LED and heterojunction bipolar transistor device fabrication.
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Organisation Website:	http://www.shef.ac.uk